The Centura® is a single-wafer, multi-chamber system that supports processing of wafers ranging in size from 5", 6", or 8". The multi-chamber design allows for individual processes in each of the chambers.
The TPCC platform may include up to 4 process chambers, and 2 auxiliarry chambers.
The platform improves on the Precision 5000® design by utilizing advanced robotics and independent loadlocks to allow for higher throughput.
The following chamber types can be added to the system:
RTP Xe - Available Nontoxic ATM, Toxic ATM, and Toxic RP configurations.
RTP Xe+ - Available Nontoxic ATM, Toxic ATM, and Toxic RP configurations.
RTP Mod 1 - Available Nontoxic ATM, Toxic NH3 ATM, and Toxic NH3 RP configurations.
SiNgen - Reduced pressure nitride process chamber.
POLYgen - Reduced pressure silicon deposition chamber.
DCSxZ-WSix - Low pressure chemical vapor deposition (LPCVD) chamber for deposition of Tungsten Silicide Oxide.
SiH4xZ-WSix - Low pressure chemical vapor deposition (LPCVD) chamber for deposition of Tungsten Silicide Oxide.
DPN - Decoupled Plasma Nitridation (DPN).
Tantalum Oxide - Low pressure chemical vapor deposition (LPCVD) chamber for deposition of Tantalum Pentoxide.
Single Slot Cooldown - Utilizes a water cooled pedestal to cool the wafer when placed in the chamber. Wafers do not contact the pedestal.
Single Slot Contact Cooldown - Utilizes a water cooled pedestal to cool the wafer when placed in the chamber. Wafers contact the pedestal, allowing for faster cooling, and higher throughput.
Single-Slot Fast Cooldown - Cools the wafer by placing it on pins above a water cooled pedestal.
Orienter - Findes center of the wafer for proper placement. Notch/flat aligns the wafer.
